Silicon Carbide Semiconductor Devices Market Size - By Component, By Wafer Size, By Product, By End Use Analysis, Share, Growth Forecast, 2025 - 2034

Silicon Carbide Semiconductor Devices Market Size

The global silicon carbide semiconductor devices market was valued at USD 2.1 billion in 2024 and is estimated to grow at a CAGR of 25.9% to reach USD 21 billion by 2034. The growth of the silicon carbide semiconductor devices industry is driven by the key factors such as surge in demand for electric vehicles, increasing application of silicon carbide semiconductor devices in aerospace and defense applications, as well as growing number of grid modernization and renewable energy projects.
 

There is rising inclination towards the adoption of electric vehicles that is exhibiting positive influence on the growth of the silicon carbide semiconductor devices industry. There is growing need for compact, efficient, and heat-resistant power electronics that manage their battery systems, electric drivetrains, and charging infrastructure. Accordingly, SiC semiconductors are critical components that is utilized in the powertrains of EVs within the inverters, DC to DC converters, and onboard chargers. Also, enhanced thermal resistance, increasing switching frequencies, and high breakdown voltage are several properties which is leading to higher vehicle efficiency and longer driving range. According to the International Energy Agency (IEA), during 2024, there were nearly 16.6 million electric cars were sold globally, which is a surge from 13.7 million electric car in 2023. Thus, the rise of electric cars is directly associated with the demand for silicon carbide semiconductor devices, in turn, accelerating the market growth across the globe.
 

In addition, the growing number of grid modernization and renewable energy projects is leading to surge in adoption of silicon carbide semiconductor devices. The incorporation of SiC semiconductors into power conversion systems improves their efficiency and reliability, especially while integrating renewable energy sources such as wind and solar into the grid. While modernising the grid, the use of SiC technologies increase the performance of medium voltage power conversion systems which are fundamental in the effective distribution and storage of electric energy. The proliferation of SiC power semiconductors, as well as the battery renewable energy projects, is accelerating the implementation of these systems across various industries.  For instance, in March 2025, TS Conductor announced their plans to open a new production plant in Hardeeville, South Carolina, which is close to the Port of Savannah. The USD 134 million project is part of ongoing grid modernization efforts to accommodate the growing demand for high-capacity electricity lines. The plant will produce advanced conductors aimed to increase grid transmission capacity while boosting dependability and efficiency.  The project is in line with larger initiatives to update the American power system, which are being fueled by increased domestic production and the growing need for electricity from artificial intelligence data centers. With the help of TS Conductor's technology, utilities can boost transmission capacity and improve grid resilience to severe weather conditions. Consequentially, the focus on the adoption of sustainable energy solutions is continue driving the demand for SiC semiconductor devices owing to their central role in boosting the efficiency and reliability of contemporary power systems.
 

Silicon Carbide Semiconductor Devices Market Trends

• The growth in high-voltage fast charging networks is the major trend that is representing a growth trajectory of the global market. Technology of silicon carbide plays an important role in the advancement of the rapid fast charging stations which are necessary for improving efficiency with which Electric Vehicles (EVs) are serviced and used. SiC semiconductors have superior thermal conductivity in addition to increased breakdown voltage, high switching speed, and low on-resistance compared to silicon-based devices. These chararacteristics make SIC converters more efficient during power conversion and reduce energy losses in high power applications like EV fast chargers.
   
• Additionally, the use of silicon carbide semiconductor devices in emerging applications in Urban Air Mobility (UAM) and electric ships. The performance efficiency and the power density of SiC technology are superior for these applications compared to traditional silicon-based technology. For UAM, electric vertical take-off and landing (eVTOL) aircraft require efficient, compact, low-weight power electronics to manage high-voltage operations under extreme conditions. SiC devices are able to incorporate higher switching frequencies with greater power densities at higher operational temperatures which is beneficial to the eVTOL systems. Hence, these factors help improve performance, range, and decrease weight that is vital for the solutions to UAM, which is accelerating the market growth at a substantial rate.
   
• Furthermore, the rising inclination towards efficient data centers and cloud computing is another key trend that is resulting in rapid market expansion. SiC coolers require significantly less energy to operate at full capacity, making SiC technology very effective. Like other data centers, this one has drastically reduced it is energy costs, operational costs, and resource usage. They are more suitable for high power uses like these when compared to traditional silicon based devices. With an increase in usage of cloud, data centers are seeking to balance energy usage with increased workloads. This challenge can be solved by SiC Semiconductors, as they use more efficient power conversion and heat management systems which results in increased performance and reliability. Therefore, the growing concern regarding efficient power use in data centers and cloud computing facilities is accelerating the incorporation of SiC semiconductor devices into the industry.
   

Silicon Carbide Semiconductor Devices Market Analysis

Based on the component, the market is segmented into schottky diodes, FET/MOSFET transistors, integrated circuits, rectifiers/diodes, power modules, and others.
 

• Power modules segment accounted for USD 581 million in 2024. The segment is expanding because to SiC power modules enable smaller and lighter power systems by lowering the cooling requirements. Thereby, the power modules are gaining high popularity in electric vehicles, consumer electronics, and portable power systems. Also, the widespread adoption of electric vehicles is fueling the production of high-speed electric charging infrastructure. Chargeable consumption for SiC power modules at ultra fast charging stations (in excess of 800V) is viable with no or very les energy wasted.
   
• Integrated circuits accounted as the fastest growing segment that is likely to reach USD 2.3 billion in 2034. There is rapid proliferation of 5G infrastructure, as well as increasing industrial automation is soaring the demand for SiC ICs. Moreover, the growing use of infrastructure that supports renewable sources of energy signals another important market for SiC semiconductor integrated circuits as they are used for grid-scale power conversion, solar inverters, wind energy systems, and energy storage applications.
   

Based on the wafer size, the silicon carbide semiconductor devices market is divided into 1 inch to 4 inches, 6 inches, and 8 inches.
 

• The 6 Inches segment is expected to account for 55.7% of the global market in 2024 because 6-inch SiC wafers provide better yield per wafer and lower production costs per device which leads to lower costs for manufacturers as compared to 4-inch wafers. Also, 6 inch wafers are being used more often to fabricate high voltage, energy efficient SiC components for power concentrated charging applications with the increase of EFI charging stations for EVs. Moreover, there is a shift in the market towards using 6 inch wafers to gain economies of scale, which increase in use in automotive and renewables industries, in turn, accelerating the segment growth globally.
   
• The 8 inches segment accounted for CAGR of 31.3% in 2025-2034. The 8-inch wafers are more cost effective because of the bigger surface area which facilitates a higher number of chips being manufactured per wafer, thus lowering the cost per device and improving the financial practicability of SiC technology. The SiC semiconductors are extensively utilized in the applications over 600V. The enhanced performance of these power modules, used for EV fast chargers, grid facilities and industrial machinery, is made possible with the larger size of the wafer over the silicon ones due to the high performance of the power modules. Furthermore, there is a significant increase in the economic spending and partnerships directed towards enhancing supply chain resilience, leading to major semiconductor manufacturers increasing production capacity of the 8 inch wafers.
   

Based on product, the silicon carbide semiconductor devices market is segmented into optoelectronic devices, power semiconductors, and frequency devices.

• Frequency devices segment dominated the market accounting for USD 885.2 million in 2024. The aerospace, defense, and broadcasting industries are using SiC devices that feature radio frequency components because of their capacitance to operate in high power and frequency conditions. Also, SiC offers devices with high speed and power capabilities because, unlike silicon as they have better breakdown voltage, higher bandgap, and wider thermal conductivity, which is propelling the segment growth. Moreover, the distribution of new technologies such as Wi-Fi 6, satellite internet, and ultra-wideband (UWB) result in strong, stable data transfer which is supported by SiC frequency devices is fostering the demand for frequency devices at a substantial rate.
   
• Optoelectronic devices segment will grow at a CAGR of 31.1% during the forecast period. SiC optoelectronic devices such as LEDs, laser diodes, and photodetectors are highly robust, enabling these devices to function in extreme temperatures and environments with high radiation which makes these devices ideal for use in aerospace and defense as well as industrial needs. The increase in data consumption as well as the necessity for faster data transfer is driving the implementation of SiC-based photodetectors and laser diodes in communication networks for fiber optics. Moreover, SiC-based are being utilized for medical imaging equipment, biosensors, and diagnostic devices providing improved performance in precision detection and monitoring applications.
   

Based on end-user, the silicon carbide semiconductor devices market is bifurcated into automotive, energy & power, consumer electronics, aerospace & defense, medical devices, data & communication devices, and others.
 

• The automotive end user segment dominated the market, accounting for USD 707.1 million in 2024 owing to the rising use of SiC devices that make powertrains more efficient, minimize energy wastage, and increase battery life, which is integrated with the EVs and HEVs emerging trends. Also, overall system performance increases with range because of higher switching frequencies and lower energy losses with SiC power modules and inverters. Furthermore, the growing adoption of stringent emission norms and incentives for the use of EVs require modernized automation which is fuel efficient and integrates lower carbon emissions on automakers has shifted the focus onto the use of SiC technology, in turn, soaring the demand for silicon carbide semiconductor devices in automotive end-user segment.
   
• Energy & power market is expected to register highest growth during the forecast period, growing at a CAGR of 28% for 2025 to 2034. SiC components are crucial to the integration of smart grids into obsolete infrastructures being upgraded by utility providers and governments to ensure effective management of power, voltage regulation, and minimized transmission losses. Reduction of energy consumption facilitated by SiC’s lower switching losses and greater tolerance to elevated temperatures assist in the achievement of sustainability objectives. In addition, utility and industrial compliance incentivization couple with rise in adoption of standards aimed at increasing efficiency alongside policies advancing the adoption of clean energy are shifting their focus towards SiC technology, which is accelerating the growth of the energy & power in the market.
   

In 2024, the U.S. silicon carbide semiconductor devices market accounted for USD 505.9 million. The U.S. has witnessed a major rise in demand for silicon carbide (SiC) semiconductor devices due to multifactorial innovation technology and strategic national objectives. In US, the electric vehicles (EVs) industry is increasingly growing as American car manufacturers like Tesla, Ford, and General Motors are rapidly adopting SiC power electronics to boost energy efficiency, reduce power conversion losses and further enhance the performance of their vehicles. These technologies in semiconductors significantly improve the design of electric powertrains facilitating the development of more compact, lighter, and highly energy-efficient vehicle systems which helps tackle important consumer expectations on range and charging performance. Moreover, the use of SiC semiconductors is gaining traction in the military and defense. The aerospace and military fields also use “hi-tech” semiconductor devices that is use in harsh environmental conditions, which is contributing to the regional market expansion.
 

The Germany Silicon Carbide Semiconductor Devices market is expected to grow at a CAGR of 28% during the forecast period. The Germany market is bolstered by the increasing demand of different industries for high-performing power electronics has accelerated the use of SiC devices. Features such as high thermal conductivity and voltage resistance, leading SiC devices ideal for various applications that require superior performance. Additionally, the growth of renewables sector is another factor that is stipulating the demand of SiC semiconductors devices. The country's powerful Energiewende policy requires considerable spending on wind and solar energy as well as on the modernization of the grid, which offers a new market opportunity for advanced power electronics over the anticipated years.
 

China market is expected to grow at a CAGR of 28.2% during the forecast period. Factors such as renewable energy integration and rapid penetration of consumer electronics such as smartphones, tablets, laptops, and other electronic devices. Also there has been an increase in the demand for SiC semiconductors which improves the efficiency of EV powertrains and charging systems due to the rapid development of the electric vehicle market in China. Furthermore, the growing investments from the central government and state-backed subsidies have contributed to improve the Chinese semiconductor industry has resulted in the enhancement of SiC technology, in turn, leveraging growth opportunities for the market expansion during the estimated period.
 

In 2024, Japan is expected to account for a share of 16.1% of the silicon carbide semiconductor devices market in Asia Pacific. Several factors such as emergence of advanced technologies, industrial automation, and government strategy are driving Japan’s demand for silicon carbide (SiC) semiconductor devices. Additionally, the country’s strong electronics manufacturing ecosystem is another key driver for the adoption of SiC semiconductors. Japanese electronic companies are progressively using SiC devices in high-performance computing, telecommunications infrastructure, and advanced industrial equipment, which is attributing to the growth of the regional market at a significant rate.
 

South Korea market accounted for USD 1 billion in 2024. South Korea is accounted with the rapid roll out of 5G technology that needs high performance semiconductors to manage the higher amounts of data and frequencies. The advanced telecommunication networks will require the supporting infrastructure that is provided by SiC devices. In addition, South Korea’s semiconductor manufacturing ecosystem led by global powerhouses Samsung and SK Hynix is heavily investing into the research and production of SiC devices. Government strategies, including supporting research initiatives, technological development, and policy incentivization are increasing boosting the domestic SiC semiconductor supply chain, which is presenting growth prospects for the south korea silicon carbide semiconductor devices industry.
 

Silicon Carbide Semiconductor Devices Market Share

The silicon carbide (SiC) semiconductor devices market is consolidated. There are few concentrated market players due to high capital investments and technology requirements in the areas of SiC wafer production, device fabrication as well as R&D. Companies like Wolfspeed, Infineon Technologies, and STMicroelectronics have a considerable presence in the market and are holding highest numbers of market shares of nearly 48.7%. These companies have competitive advantage because of their proprietary technologies as well as the use of vertical integration. Their positions also get strengthened because of long-term supply contracts and partnerships with automotive and renewable energy firms.
 

The market for silicon carbide semiconductor devices is continuously developing with new product innovations that are tailored for advancing silicon carbide wafer capabilities. For instance, in September 2022, AIXTRON SE introduced its new G10-SiC 200 mm system for the high-volume production of the newest generation of silicon carbide ("SiC") power devices on 150/200 mm SiC wafers. The International Conference on Silicon Carbide and Related Materials (ICSCRM) announced this high temperature CVD technology, which is pushing innovation to the next level. SiC, a material with a wide band gap, is expected to become a commonplace technology for effective power electronics. SiC aids climate protection by significantly assisting in the decarbonization of our contemporary society.
 

Wolfspeed vertically integrated silicon carbide leading company as the industry's shift from silicon to silicon carbide in components and devices. The company portfolio includes silicon carbide material, power modules, discrete power devices, and power die products, which are contributing to the improvement of automobiles, aircraft, renewable energy sources, race teams, cities, and many other applications.
 

STMicroelectonics is one of the industry leader in SiC with a sizable portfolio of important patents and 25 years of dedication to research and development. As the location of the biggest SiC R&D and manufacturing facilities, Catania has long been a crucial location for ST's innovation, effectively assisting in the creation of new methods for creating more and better SiC devices. STMicroelectonics portfolio include STPOWER SiC MOSFETs, which have the highest junction temperature rating in the industry at 200 °C for more effective and straightforward designs, and STPOWER SiC diodes, which have switching losses that are negligible and a 15% lower forward voltage (VF) than conventional silicon diodes.
 

Silicon Carbide Semiconductor Devices Market Companies

Leading companies in the silicon carbide semiconductor devices industry comprise:

• Wolfspeed
• STMicroelectronics
• Infineon Technologies
• onsemi
• ROHM Semiconductor
   

Silicon Carbide Semiconductor Devices Industry News

• In March 2025, RFMW, a division of Exponential Technology Group, Inc., formed a strategic partnership with CoolCAD Electronics in order to expand its line of high-power and high-voltage silicon carbide (SiC) semiconductor devices. This contract enhances RFMW's capacity to provide clients with cutting-edge wide bandgap solutions, allowing for increased efficiency, performance, and dependability in high-temperature and high-power applications. CoolCAD's wide bandgap silicon carbide (SiC) semiconductor transistors and integrated circuits (ICs) will be distributed by RFMW as part of this collaboration.
   
• In February 2025, Infineon Technologies AG's plan for silicon carbide (SiC) at 200 mm has advanced significantly. The devices that are produced in Villach, Austria, offer top-notch SiC power technology for high-voltage applications such as electric vehicles, trains, and renewable energy sources. Furthermore, Infineon is on schedule to switch from 150-millimeter wafers to the bigger and more effective 200-millimeter diameter wafers at its manufacturing facility in Kulim, Malaysia.
   
• In June 2024, ROHM Co. Ltd., a power semiconductor device manufacturer based in Japan, has introduced the EcoSiC name as a trademark for silicon carbide (SiC) devices. The EcoSiC brand launch aims to achieve a number of strategic goals, including increased performance, sustainability, and technological innovation. The EcoSiC logo is a component of ROHM's "Power Eco Family" branding idea, which seeks to optimize electronic applications' efficiency and compactness while also having a beneficial environmental impact.
   

This silicon carbide semiconductor devices market research report includes in-depth coverage of the industry with estimates & forecasts in terms of revenue (USD Million) from 2021 to 2034, for the following segments:

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Market, By Component

• Schottky diodes
• FET/MOSFET transistors
• Integrated circuits
• Rectifiers/diodes
• Power modules
• Others

Market, By Wafer Size

• 1 inch to 4 inches
• 6 inches
• 8 inches

Market, By Product

• Optoelectronic devices
• Power semiconductors
• Frequency devices

Market, By End Use

• Automotive
• Energy & power
• Consumer electronics
• Aerospace & defense
• Medical devices
• Data & communication devices
• Others

The above information is provided for the following regions and countries:

• North America
  • U.S.
  • Canada
• Europe
  • UK
  • Germany
  • France
  • Italy
  • Spain
  • Russia
• Asia Pacific
  • China
  • India
  • Japan
  • South Korea
  • ANZ 
• Latin America
  • Brazil
  • Mexico
• MEA
  • UAE
  • Saudi Arabia
  • South Africa