Silicon Carbide MOSFETs Market Size - By Device Type, Voltage Range, Application, Technology Node, End Use Industry Analysis, Share, Growth Forecast, 2024 - 2032

Report ID: GMI12011
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Published Date: October 2024
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Report Format: PDF

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Silicon Carbide MOSFETs Market Size

The global silicon carbide MOSFETs market was valued at USD 2 billion in 2023 and is estimated to grow at a CAGR of 30.1% from 2024 to 2032.


Silicon Carbide MOSFETs Market

The transport industry, which contributes significantly to greenhouse gas emissions, is undergoing transitions to become electrified. This large scale transition in transport sector is propelling the demand for SiC MOSFETS as they are crucial components of EV powertrain, drivetrain, and charging infrastructure, offering high efficiency and reduced power loss compared to traditional silicon-based components. Moreover, governments across the world are aming at reducing their transportation carbon footprint, driving the market growth of silicon carbide MOSFETs market during the forecast period.
 

SiC MOSFETs are increasingly being used in renewable energy generation and storage. These MOSFETs are very critical components of inverters and power converters used in the generation and storage of renewable energy. The increasing deployment of solar and wind power installations, driven by government incentives and the need for sustainable energy solutions, is expected to boost the demand for SiC MOSFETs.
 

For instance, in June 2024, Vishay Intertechnology Introduces First SiC MOSFET Products to PCIM Europe 2024. The company will be showcasing its broad portfolio of power management solutions that address several increasingly important trends in power electronics, including e-mobility, high efficiency power conversion, energy storage, and grid management. Taking center stage for Vishay at PCIM will be the company’s newly released 1200 V MaxSiC series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 55 m?, 95 m?, and 280 m? in standard packages for industrial applications, with custom products also available.

Silicon Carbide MOSFETs Market Trends

The growing penetration of electric vehicles worldwide is one of the main drivers of silicon carbide MOSFETs. Due to their higher efficiency and energy saving capabilities, silicon carbon MOSFETs have quickly become the preferred components for EV powertrains, APUs and charging infrastructure. This trend is likely to accelerate further as automakers try to provide longer range EVs with better performance while meeting emissions regulations.
 

Renewable energy, particularly solar and wind energy, are significantly propelling the growth of SiC MOSFETs. Worldwide efforts for shifting to clean energy intensifies, the need for high-efficiency power electronics that can maximize the output of renewable energy sources is also increasing, which is ultimately increasing the demand for silicon carbide MOSFETs market during the forecast period.
 

The adoption of 5G networks provides new opportunities for SiC MOSFETs. 5G networks requires high performance and high-power capacity solution. SiC MOSFETs can operate very efficiently at higher frequencies and temperatures making them ideal for deployment in 5G base stations and data centers. As 5G technology continues to expand globally, the demand for SiC MOSFETs in telecommunications is expected to grow significantly, driven by the need for faster and more reliable network performance.
 

Silicon Carbide MOSFETs Market Analysis

Development and production of silicon carbide MOSFETS is a cost intensive process due to complex design, use of advanced materials and complex manufacturing process. The integration of additional features and technologies into packaging solutions often requires substantial investments, which can impact profit margins. In such cases, companies need to evaluate the cost-benefit ratio to ensure that additional functionalities are worthwhile at the expense.
 

Silicon Carbide MOSFETs Market Size, By Device Type, 2022-2032 (USD Billion)

Based on device type, the silicon carbide MOSFETs market is divided into discrete SiC MOSFETs, module SiC MOSFETs. The module SiC MOSFETs segment is expected to register a CAGR 31% of the forecast period.
 

  • Module SiC MOSFETs refer to SiC MOSFETs that are integrated into a module or package that includes multiple devices and additional components such as gate drivers and thermal management systems. These modules are designed to simplify the implementation of SiC technology in high-power applications by providing a ready-to-use, compact solution with enhanced performance characteristics.
     
  • Module SiC MOSFETs are commonly used in applications such as industrial inverters, power supplies, and traction drives for electric vehicles. They offer advantages such as improved power density, reduced parasitic inductance, and easier integration into complex systems, making them suitable for applications requiring robust and reliable power management.
     
Silicon Carbide MOSFETs Market Share, By Technology Node, 2023

Based on technology node, the silicon carbide MOSFETs market is divided into 150mm wafer technology, 200mm wafer technology. The 150mm wafer technology segment is projected to account for USD 10.3 billion by 2032.
 

  • 150mm wafer technology, also known as 6-inch wafer technology, refers to the production process that uses 150mm diameter silicon wafers as the substrate for manufacturing SiC MOSFETs. This technology is typically employed in early-stage or niche applications where cost and production volume are manageable.  
     
  • While 150mm wafers offer some advantages in terms of material handling and manufacturing flexibility, they are gradually being phased out in favor of larger wafer sizes.  
     
  • Despite this, 150mm wafer technology remains relevant for certain applications and markets, particularly where smaller-scale production is required or where existing infrastructure supports this wafer size.
     
U.S. Silicon Carbide MOSFETs Market Size, 2022-2032 (USD Million)

In 2023, the U.S. silicon carbide MOSFETs market accounted for a share of 67.8% of the North America. The U.S. Silicon Carbide (SiC) MOSFETS is driven by strong demand for electric vehicle and the government’s focus on reducing carbon emissions. the rapid deployment of 5G infrastructure and the country's leadership in semiconductor innovation further bolster the demand for SiC MOSFETs. With a well-established industrial base and continuous R&D investments, the U.S. is expected to remain a key market for SiC technology.
 

Japan market is growing due presence of large automotive and electronics industries prompting the demand of advanced SiC MOSFETs. Japanese automakers are at the forefront of electric vehicle (EV) development, increasingly adopting SiC MOSFETs to enhance vehicle efficiency and performance. Additionally, Japan's focus on energy conservation and its commitment to renewable energy have led to growing demand for SiC MOSFETs in solar inverters and power grid applications.
 

South Korean silicon carbide MOSFETs market companies are investing heavily in electric vehicle (EV) development and renewable energy projects, both of which are major applications for SiC MOSFETs. The country's leadership in 5G technology and its ongoing investments in smart grids and power electronics also contribute to the increasing demand for SiC MOSFETs. With a robust industrial base and a commitment to technological advancement, South Korea is poised to become a significant player in the global SiC MOSFETs market.
 

For instance, in June 2024, Mitsubishi Electric Corporation announced that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10. Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.
 

Silicon Carbide MOSFETs Market Share

The key players in the silicon carbide MOSFET market are Hitachi Power Semiconductor Device, II-VI (formerly Coherent Corporation), Infineon, Long-Street, Microchip, Mitsubishi Electric, ON Semiconductor, Renesas, ROHM, STARCHIP, STMicroelectronics, Toshiba and TT Electronics. Product performance and reliability are primary competitive differentiators, as SiC MOSFETs are valued for their high efficiency, heat resistance, and suitability for high-voltage applications in industries like automotive, renewable energy, and industrial equipment.
 

Silicon Carbide MOSFETs Market Companies

Major players operating in the silicon carbide MOSFETs industry are:

  • Hitachi Power Semiconductor Device, Ltd.
  • II-VI Incorporated (now Coherent Corp.)
  • Infineon Technologies AG
  • Littelfuse, Inc.
  • Microchip Technology Inc.
  • Mitsubishi Electric Corporation
  • ON Semiconductor
  • Renesas Electronics Corporation
  • ROHM Semiconductor
  • STARCHIP
  • STMicroelectronics
  • Toshiba Corporation
     

Silicon Carbide MOSFETs Industry News

  • In May 2024, Infineon unveils CoolSiC MOSFETs 400 V redefining power density and efficiency in AI server power supplies. The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
     
  • In December 2023, Nexperia is developing its own SiC MOSFETs, marked by the introduction of two inaugural 1,200 V devices in three-pin packaging: the NSF040120L3A0 and NSF080120L3A. Nexperia have one of the key advantages of its new SiC MOSFETs is their relatively stable drain-to-source on-resistance (RDS (on)) over the operating temperature range of the device.
     

This silicon carbide MOSFETs market research report includes in-depth coverage of the industry with estimates & forecast in terms of revenue (USD million) & (Volume Units) from 2021 to 2032, for the following segments:

Market, by device type

  • Discrete SiC MOSFETs

  • Module SiC MOSFETs

Market by voltage range

  • 650V
  • 900V
  • 1200V
  • 1700V
  • 3300V and above

Market, by application

  • Power supplies
  • Inverters
  • Electric vehicles (EVs)
  • Industrial equipment
  • Others

Market, by technology node

  • 150mm wafer technology
  • 200mm wafer technology

Market, by end-use industry

  • Automotive
  • Industrial
  • Consumer electronics
  • Telecommunications
  • Others

The above information is provided for the following regions and countries:

  • North America
    • U.S.
    • Canada
  • Europe
    • UK
    • Germany
    • France
    • Italy
    • Spain
    • Russia
  • Asia Pacific
    • China
    • India
    • Japan
    • South Korea
    • Australia 
  • Latin America
    • Brazil
    • Mexico
  • MEA
    • UAE
    • Saudi Arabia
    • South Africa

 

Authors: Suraj Gujar, Rutvij Kshirsagar
Frequently Asked Question(FAQ) :
Who are the major players in the silicon carbide MOSFETs industry?
Major players in the industry include Hitachi Power Semiconductor Device, Ltd., Littelfuse, Inc., Microchip Technology Inc., Mitsubishi Electric Corporation, ON Semiconductor, Renesas Electronics Corporation, ROHM Semiconductor, and STARCHIP.
What is the market share of the U.S. in the North America silicon carbide MOSFETs market?
What is the expected growth rate of the module SiC MOSFETs segment?
How big is the silicon carbide MOSFETs market?
Silicon Carbide MOSFETs Market Scope
  • Silicon Carbide MOSFETs Market Size
  • Silicon Carbide MOSFETs Market Trends
  • Silicon Carbide MOSFETs Market Analysis
  • Silicon Carbide MOSFETs Market Share
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    Base Year: 2023

    Companies covered: 24

    Tables & Figures: 410

    Countries covered: 19

    Pages: 210

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