Buy Now
$4,123 $4,850
15% off
$4,840 $6,050
20% off
$5,845 $8,350
30% off
Buy now
Premium Report Details
Base Year: 2023
Companies covered: 24
Tables & Figures: 410
Countries covered: 19
Pages: 210
Download Free PDF

Silicon Carbide MOSFETs Market
Get a free sample of this reportGet a free sample of this report Silicon Carbide MOSFETs Market
Is your requirement urgent? Please give us your business email for a speedy delivery!
Silicon Carbide MOSFETs Market Size
The global silicon carbide MOSFETs market was valued at USD 2 billion in 2023 and is estimated to grow at a CAGR of 30.1% from 2024 to 2032.

The transport industry, which contributes significantly to greenhouse gas emissions, is undergoing transitions to become electrified. This large scale transition in transport sector is propelling the demand for SiC MOSFETS as they are crucial components of EV powertrain, drivetrain, and charging infrastructure, offering high efficiency and reduced power loss compared to traditional silicon-based components. Moreover, governments across the world are aming at reducing their transportation carbon footprint, driving the market growth of silicon carbide MOSFETs market during the forecast period.
SiC MOSFETs are increasingly being used in renewable energy generation and storage. These MOSFETs are very critical components of inverters and power converters used in the generation and storage of renewable energy. The increasing deployment of solar and wind power installations, driven by government incentives and the need for sustainable energy solutions, is expected to boost the demand for SiC MOSFETs.
For instance, in June 2024, Vishay Intertechnology Introduces First SiC MOSFET Products to PCIM Europe 2024. The company will be showcasing its broad portfolio of power management solutions that address several increasingly important trends in power electronics, including e-mobility, high efficiency power conversion, energy storage, and grid management. Taking center stage for Vishay at PCIM will be the company’s newly released 1200 V MaxSiC series silicon carbide (SiC) MOSFETs, which deliver on-resistances of 55 m?, 95 m?, and 280 m? in standard packages for industrial applications, with custom products also available.
Silicon Carbide MOSFETs Market Trends
The growing penetration of electric vehicles worldwide is one of the main drivers of silicon carbide MOSFETs. Due to their higher efficiency and energy saving capabilities, silicon carbon MOSFETs have quickly become the preferred components for EV powertrains, APUs and charging infrastructure. This trend is likely to accelerate further as automakers try to provide longer range EVs with better performance while meeting emissions regulations.
Renewable energy, particularly solar and wind energy, are significantly propelling the growth of SiC MOSFETs. Worldwide efforts for shifting to clean energy intensifies, the need for high-efficiency power electronics that can maximize the output of renewable energy sources is also increasing, which is ultimately increasing the demand for silicon carbide MOSFETs market during the forecast period.
The adoption of 5G networks provides new opportunities for SiC MOSFETs. 5G networks requires high performance and high-power capacity solution. SiC MOSFETs can operate very efficiently at higher frequencies and temperatures making them ideal for deployment in 5G base stations and data centers. As 5G technology continues to expand globally, the demand for SiC MOSFETs in telecommunications is expected to grow significantly, driven by the need for faster and more reliable network performance.
Silicon Carbide MOSFETs Market Analysis
Development and production of silicon carbide MOSFETS is a cost intensive process due to complex design, use of advanced materials and complex manufacturing process. The integration of additional features and technologies into packaging solutions often requires substantial investments, which can impact profit margins. In such cases, companies need to evaluate the cost-benefit ratio to ensure that additional functionalities are worthwhile at the expense.
Based on device type, the silicon carbide MOSFETs market is divided into discrete SiC MOSFETs, module SiC MOSFETs. The module SiC MOSFETs segment is expected to register a CAGR 31% of the forecast period.
Based on technology node, the silicon carbide MOSFETs market is divided into 150mm wafer technology, 200mm wafer technology. The 150mm wafer technology segment is projected to account for USD 10.3 billion by 2032.
In 2023, the U.S. silicon carbide MOSFETs market accounted for a share of 67.8% of the North America. The U.S. Silicon Carbide (SiC) MOSFETS is driven by strong demand for electric vehicle and the government’s focus on reducing carbon emissions. the rapid deployment of 5G infrastructure and the country's leadership in semiconductor innovation further bolster the demand for SiC MOSFETs. With a well-established industrial base and continuous R&D investments, the U.S. is expected to remain a key market for SiC technology.
Japan market is growing due presence of large automotive and electronics industries prompting the demand of advanced SiC MOSFETs. Japanese automakers are at the forefront of electric vehicle (EV) development, increasingly adopting SiC MOSFETs to enhance vehicle efficiency and performance. Additionally, Japan's focus on energy conservation and its commitment to renewable energy have led to growing demand for SiC MOSFETs in solar inverters and power grid applications.
South Korean silicon carbide MOSFETs market companies are investing heavily in electric vehicle (EV) development and renewable energy projects, both of which are major applications for SiC MOSFETs. The country's leadership in 5G technology and its ongoing investments in smart grids and power electronics also contribute to the increasing demand for SiC MOSFETs. With a robust industrial base and a commitment to technological advancement, South Korea is poised to become a significant player in the global SiC MOSFETs market.
For instance, in June 2024, Mitsubishi Electric Corporation announced that it has begun shipping low-current 3.3kV/400A and 3.3kV/200A versions of a Schottky barrier diode (SBD) embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module for large industrial equipment, including rolling stock and electric power systems, from today, June 10. Together with the existing 3.3kV/800A version, the newly named UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.
Silicon Carbide MOSFETs Market Share
The key players in the silicon carbide MOSFET market are Hitachi Power Semiconductor Device, II-VI (formerly Coherent Corporation), Infineon, Long-Street, Microchip, Mitsubishi Electric, ON Semiconductor, Renesas, ROHM, STARCHIP, STMicroelectronics, Toshiba and TT Electronics. Product performance and reliability are primary competitive differentiators, as SiC MOSFETs are valued for their high efficiency, heat resistance, and suitability for high-voltage applications in industries like automotive, renewable energy, and industrial equipment.
Silicon Carbide MOSFETs Market Companies
Major players operating in the silicon carbide MOSFETs industry are:
Silicon Carbide MOSFETs Industry News
This silicon carbide MOSFETs market research report includes in-depth coverage of the industry with estimates & forecast in terms of revenue (USD million) & (Volume Units) from 2021 to 2032, for the following segments:
Click here to Buy Section of this Report
Market, by device type
Discrete SiC MOSFETs
Market by voltage range
Market, by application
Market, by technology node
Market, by end-use industry
The above information is provided for the following regions and countries: