Silicon Carbide MOSFETs Market – By Device Type, By Voltage Range, By Application, By Technology Node, By End-use Industry & Forecast, 2024 – 2032

Silicon Carbide MOSFETs Market Size

The global silicon carbide MOSFETs market was valued at USD 2 billion in 2023 and is estimated to grow at a CAGR of 30.1% from 2024 to 2032.

The rising adoption of electric vehicles (EVs) globally is a significant growth drive for the Silicon Carbide (SiC) MOSFETs market. SiC MOSFETs are crucial in EV powertrains and charging infrastructure, offering higher efficiency and reduced power loss compared to traditional silicon-based components. As governments and automakers push for the electrification of transportation to reduce carbon emissions, the silicon carbide MOSFETs industry demand is expected to surge, driven by the need for enhanced performance and extended driving range in EVs.
 

The global shift towards renewable energy sources, such as solar and wind, is a major driver for the SiC MOSFETs market. SiC MOSFETs are essential components in inverters and power converters used in renewable energy systems, where efficiency and reliability are paramount. The increasing deployment of solar and wind power installations, driven by government incentives and the need for sustainable energy solutions, is expected to boost the demand for SiC MOSFETs.
 

For instance, in June 2024, Vishay Intertechnology Introduces First SiC MOSFET Products to PCIM Europe 2024. The company will be showcasing its broad portfolio of power management solutions that address several increasingly important trends in power electronics, including e-mobility, high efficiency power conversion, energy storage, and grid management.
 

Silicon Carbide MOSFETs Market Trends

The rapid growth of the electric vehicle market is one of the most significant trends driving the adoption of SiC MOSFETs. With the automotive industry increasingly focusing on electrification, SiC MOSFETs are becoming the preferred choice for EV powertrains and charging systems due to their superior efficiency and ability to reduce overall energy consumption. This trend is expected to accelerate as automakers seek to enhance vehicle range and performance while meeting stringent emission regulations.
 

The rollout of 5G networks is creating new opportunities for the silicon carbide MOSFETs market. 5G infrastructure requires high-performance power management solutions to support the increased data transfer rates and higher power requirements. SiC MOSFETs, with their ability to operate efficiently at higher frequencies and temperatures, are becoming essential components in 5G base stations and data centers. As 5G technology continues to expand globally, the demand for SiC MOSFETs in telecommunications is expected to grow significantly, driven by the need for faster and more reliable network performance.
 

Silicon Carbide MOSFETs Market Analysis

Developing and producing silicon carbide MOSFETs can involve significant costs due to the complexity of design, advanced materials, and manufacturing processes. The integration of additional features and technologies into packaging solutions often requires substantial investments, which can impact profit margins. Companies must carefully evaluate the cost-benefit ratio to ensure that the added functionality justifies the expense.
 

Based on device type, the market is divided into discrete SiC MOSFETs, module SiC MOSFETs. The module SiC MOSFETs segment is expected to register a CAGR of 31% over the forecast period.
 

• Module SiC MOSFETs refer to SiC MOSFETs that are integrated into a module or package that includes multiple devices and additional components such as gate drivers and thermal management systems. These modules are designed to simplify the implementation of SiC technology in high-power applications by providing a ready-to-use, compact solution with enhanced performance characteristics.
   
• Module SiC MOSFETs are commonly used in applications such as industrial inverters, power supplies, and traction drives for electric vehicles. They offer advantages such as improved power density, reduced parasitic inductance, and easier integration into complex systems, making them suitable for applications requiring robust and reliable power management.
   

Based on technology node, the silicon carbide MOSFETs market is divided into 150mm wafer technology, 200mm wafer technology. The 150mm wafer technology segment is projected to account for USD 10.3 billion by 2032.
 

• 150mm wafer technology, also known as 6-inch wafer technology, refers to the production process that uses 150mm diameter silicon wafers as the substrate for manufacturing SiC MOSFETs. This technology is typically employed in early-stage or niche applications where cost and production volume are manageable.
   
• While 150mm wafers offer some advantages in terms of material handling and manufacturing flexibility, they are gradually being phased out in favor of larger wafer sizes.
   
• Despite this, 150mm wafer technology remains relevant for certain applications and markets, particularly where smaller-scale production is required or where existing infrastructure supports this wafer size.
   

The U.S. accounted for a share of 67.8% of the North America silicon carbide MOSFETs market in 2023. The U.S. market is driven by strong demand from the electric vehicle (EV) industry, renewable energy sector, and advanced power electronics applications. The U.S. government's focus on reducing carbon emissions and promoting clean energy technologies has led to increased adoption of SiC MOSFETs in EVs, solar inverters, and wind power systems. Additionally, the rapid deployment of 5G infrastructure and the country's leadership in semiconductor innovation further bolster the demand for SiC MOSFETs. With a well-established industrial base and continuous R&D investments, the U.S. is expected to remain a key market for SiC technology.
 

 Japan market, driven by its advanced manufacturing capabilities and strong presence in the automotive and electronics industries. Japanese automakers are at the forefront of electric vehicle (EV) development, increasingly adopting SiC MOSFETs to enhance vehicle efficiency and performance. Additionally, Japan's focus on energy conservation and its commitment to renewable energy have led to growing demand for SiC MOSFETs in solar inverters and power grid applications. The country's expertise in semiconductor technology and ongoing investments in R&D make it a crucial player in the global SiC MOSFETs market.
 

China market, driven by the country's aggressive push towards electric vehicles (EVs), renewable energy, and technological innovation. As the world's largest producer of EVs, China has a high demand for SiC MOSFETs, which are essential for improving the efficiency and range of electric powertrains. Additionally, China's ambitious goals for renewable energy expansion and its leadership in 5G deployment further contribute to the growing demand for SiC MOSFETs. With substantial government support and a rapidly growing semiconductor industry, China is expected to play a pivotal role in the global SiC MOSFETs market.
 

South Korea market is emerging as a key market for driven by its advanced semiconductor industry and strong focus on innovation in electronics and automotive technologies. South Korean companies are investing heavily in electric vehicle (EV) development and renewable energy projects, both of which are major applications for SiC MOSFETs. The country's leadership in 5G technology and its ongoing investments in smart grids and power electronics also contribute to the increasing demand for SiC MOSFETs. With a robust industrial base and a commitment to technological advancement, South Korea is poised to become a significant player in the global SiC MOSFETs market.
 

Silicon Carbide MOSFETs Market Share

In the silicon carbide (SiC) MOSFETs market, competition among key players like Hitachi Power Semiconductor Device, II-VI (Coherent Corp.), Infineon, Littelfuse, Microchip, Mitsubishi Electric, ON Semiconductor, Renesas, ROHM, STARCHIP, STMicroelectronics, Toshiba, and TT Electronics is driven by several critical factors. Product performance and reliability are primary competitive differentiators, as SiC MOSFETs are valued for their high efficiency, heat resistance, and suitability for high-voltage applications in industries like automotive, renewable energy, and industrial equipment.
 

Companies focus heavily on innovation in design and engineering, working to deliver SiC MOSFETs with superior switching speed, thermal performance, and power density. Price competitiveness is also essential, as the higher production cost of SiC compared to silicon remains a challenge. Effective distribution networks, strong customer relationships, and partnerships with OEMs and system integrators are crucial for expanding market reach. Additionally, quality control, compliance with global standards, and continuous R&D investment are important for maintaining a competitive edge in this rapidly growing and technically demanding market.
 

Silicon Carbide MOSFETs Market Companies

Major players operating in the silicon carbide MOSFETs industry are:

• Hitachi Power Semiconductor Device, Ltd.
• II-VI Incorporated (now Coherent Corp.)
• Infineon Technologies AG
• Littelfuse, Inc.
• Microchip Technology Inc.
• Mitsubishi Electric Corporation
• ON Semiconductor
• Renesas Electronics Corporation
• ROHM Semiconductor
• STARCHIP
• STMicroelectronics
• Toshiba Corporation
   

Silicon Carbide MOSFETs Industry News

• In May 2024, Infineon unveils CoolSiC MOSFETs 400 V redefining power density and efficiency in AI server power supplies. The new MOSFET portfolio was specially developed for use in the AC/DC stage of AI servers, complementing Infineon’s recently announced PSU roadmap. The devices are also ideal for solar and energy storage systems (ESS), inverter motor control, industrial and auxiliary power supplies (SMPS) as well as solid-state circuit breakers for residential buildings.
   
• In December 2023, Nexperia is developing its own SiC MOSFETs, marked by the introduction of two inaugural 1,200 V devices in three-pin packaging: the NSF040120L3A0 and NSF080120L3A. Nexperia have one of the key advantages of its new SiC MOSFETs is their relatively stable drain-to-source on-resistance (RDS (on)) over the operating temperature range of the device.
   

This silicon carbide MOSFETs market research report includes in-depth coverage of the industry with estimates & forecast in terms of revenue (USD million) & (Volume Units) from 2021 to 2032, for the following segments:

Click here to Buy Section of this Report

Market, By Device Type

• Discrete SiC MOSFETs
• Module SiC MOSFETs

Market, By Voltage Range

• 650V
• 900V
• 1200V
• 1700V
• 3300V and above

Market, By Application

• Power supplies
• Inverters
• Electric vehicles (EVs)
• Industrial equipment
• Others

Market, By Technology 

• 150mm wafer technology
• 200mm wafer technology

Market, By End-Use Industry

• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Others

The above information is provided for the following regions and countries:

• North America
  • U.S.
  • Canada
• Europe
  • UK
  • Germany
  • France
  • Italy
  • Spain
  • Russia
• Asia Pacific
  • China
  • India
  • Japan
  • South Korea
  • Australia 
• Latin America
  • Brazil
  • Mexico
• MEA
  • UAE
  • Saudi Arabia
  • South Africa