GaN Semiconductor Device Market Size - By Type, Component, Voltage Range, End Use Industry Analysis, Share, Growth Forecast, 2025 - 2034

GaN Semiconductor Device Market Size

The global GaN semiconductor device market was valued at USD 22.6 billion in 2024 and is estimated to grow at a CAGR of 6.8% to reach USD 43.4 billion by 2034. The growth of the market is attributed to factors such as increasing adoption of GaN in consumer electronics and growing integration in the automotive industry.
 

The increasing adoption of GaN in consumer electronics is one of the leading factors driving the demand for GaN Semiconductor Devices worldwide. GaN semiconductor devices elevate the performance and utility of consumer electronics devices by reducing size and system cost, increasing power efficiency, and enabling smaller sleeker designs. For example, GaN mini-chargers and ultra-thin GaN power adapters for fast charging and super-portability have become a consumer requirement for devices ranging from phones and tablets to laptops and gaming systems. Design, utility, and energy efficiency have evolved from premium offerings to everyday requirements.
 

For instance, in November 2023, GaN Systems, a global leader in GaN (gallium nitride) power semiconductors produced the latest breakthroughs of GaN for sustainable and cost-effective power designs at the 2023 China Power Electronics and Energy Conversion Congress and the 26th China Power Supply Society Annual Conference & Exhibition (CPEEC & CPSSC 2023).
 

The automotive industry is also leveraging GaN semiconductors for several applications. GaN-based power devices provide several benefits such as higher power density, faster switching speed, and improved thermal management. These features are crucial for electric and hybrid vehicles, where efficient power conversion and thermal control are essential for optimizing performance and extending the driving range.
 

For example, the rising focus on technological advancements has driven the adoption of Gallium Nitride (GaN) in EV traction systems, significantly reshaping inverter design for 400V and 800V battery architectures. GaN’s superior performance characteristics highlight its growing importance in enhancing efficiency and power density. As the industry moves towards higher voltage platforms, the adoption of GaN-based traction inverters is expected to play an essential role in driving the next generation of electric vehicle innovation.
 

GaN Semiconductor Device Market Trends

• One of the key trends in the GaN semiconductor device industry is the impact on RF (Radio Frequency) systems. GaN semiconductors significantly impact RF (Radio Frequency) systems. GaN's high electron mobility and saturation velocity enable the development of high-frequency, high-power amplifiers for wireless communication systems, radar systems, and satellite communication. GaN RF devices offer improved linearity, higher power output, and enhanced efficiency, enabling the transmission of signals over longer distances and at higher data rates.
   
• GaN semiconductor devices are ideal for energy-saving and miniaturization applications due to their high-speed switching capabilities. For example, ROHM's gate drivers for GaN were designed to maximize the high-speed switching performance of these devices by implementing short propagation delay and narrow pulse width and to simplify the design.
   
• The adoption of GaN semiconductor devices for high-power electronic devices is another major trend supporting the growth of the GaN semiconductor device market. GaN semiconductor devices have also recently ventured into the realm of high-power fast chargers designed for premium smartphones. The anticipation is that this robust consumer market, characterized by substantial demand, will be the primary driving force behind the growth of the market during the next couple of years.
   

GaN Semiconductor Device Market Analysis

Based on the type, the market is segmented into opto-semiconductors, RF semiconductors, power semiconductors.
 

• The power semiconductors market accounted for USD 9.4 billion in 2024. GaN semiconductor devices like silicon for power electronics can be applied across diverse industries, from consumer chargers and power supplies, electric vehicles, and data center power management to military radars and aerospace systems, enabling higher efficiency, smaller form factors, and enhanced capabilities compared to its silicon counterparts.
   
• Opto-semiconductors market accounted for USD 7.5 billion in 2023. Gallium Nitride (GaN) semiconductors are integral to optoelectronic devices, especially in the development of high-efficiency light-emitting diodes (LEDs) and laser diodes. The National Institute of Standards and Technology (NIST) has pioneered the fabrication of GaN nanowire LEDs, which are utilized in on-chip optical interconnects and multifunctional scanning probe tips. These advancements leverage GaN's superior mechanical strength and direct bandgap properties, enhancing performance in applications such as optical communications and high-resolution imaging.
   

Based on components, the market is divided into transistor, diode, rectifier, power IC, and others. GaN transistors enable high-efficiency power amplification at microwave frequencies and support THz device advancements. The rectifier segment benefits from active rectification for reduced conduction losses.
 

• The transistor market accounted for 36.3% of the global GaN semiconductor device market in 2024. GaN transistors are well-suited for serving as power amplifiers at microwave frequencies due to their ability to function at significantly higher temperatures and operate at elevated voltages in addition to containing beneficial attributes for the development of THz (terahertz) devices.
   
• The rectifier market accounted for 12.4% of the global GaN semiconductor device market in 2024. Active or synchronous rectification is widely used in modern power supplies to enhance efficiency by eliminating the turn-on voltage of rectifier diodes, thus minimizing conduction losses. For example, GaN-based active rectifier diodes have been demonstrated in half-wave rectification applications (110/230 VAC, 50/60 Hz) with a forward current capacity of up to 6 A. A single-device implementation of low-loss GaN active rectifier diodes offers a more cost-effective solution compared to multi-chip or package-integrated alternatives that support the market growth during the forecast period.
   

Based on voltage range, the GaN semiconductor device market is segmented into less than 100 V, 100-500 V, more than 500 V. The rapid shift towards improving efficiency and improved power levels are major factors which are contributing to the growth of the market.
 

• The less than 100V GaN semiconductor devices market dominated the market accounting for USD 9.8 billion in 2024.  The applications for 100V (and less) GaN FETs are numerous from reducing distortion in Class-D amplifiers to improving efficiency in synchronous rectifiers and motor drives. 100V GaN FETs are also popular in 48V automotive and server applications, as well as USB-C, lidar and LED lighting.
   
• The more than 500 V GaN semiconductor devices market accounted for USD 5.1 billion in 2023. GaN-on-Si has a wide range of future applications, extending the current HEMT capabilities with improved power levels above 1kW (1000V). This technology aids designers in increasing operating voltages and pushing the frequency response beyond the Ka-band into the E-band, W-band, and terahertz space.
   

Based on end-use industry, the GaN semiconductor device market is segmented into aerospace & defense, automotive, consumer electronics, energy & power, healthcare, industrial, IT & telecommunications, and others.
 

• The aerospace & defense segment will grow at a CAGR of 8% during the forecast period. For example, GaN FETs and ICs are smaller, lower-weight, more efficient, higher reliability, and lower cost than aging silicon devices. This enables entirely new architectures for satellite power and data transmission, robotics, drones, and aeronautical power systems. Space systems include space programs, satellite buses, space exploration, and service providers.
   
• The automotive segment will grow at a CAGR of 8.6% during the forecast period. GaN enables smaller, more efficient and lower cost power systems. For the automotive industry, this means smaller, lighter batteries, improved charging performance, and greater range for vehicles. Additionally, GaN advances capabilities in vehicle autonomous and wireless power applications.
   

• In 2024, the U.S. GaN semiconductor device market accounted for USD 5.3 billion. U.S. leadership in GaN-based technologies is important to secure technological, commercial, and national security advantages. The U.S. defense industry already relies heavily on GaN semiconductor technology for advanced radar systems and other applications. GaN is also utilized in 5G and the upcoming 6G wireless infrastructure due to its high-frequency performance capabilities.
   
• The Germany GaN semiconductor device market is expected to reach USD 2.4 billion by 2034. In Germany, Gallium Nitride (GaN) semiconductor devices are increasingly utilized across various industries to enhance energy efficiency and performance. Companies like Infineon Technologies are pioneering GaN applications, particularly in power semiconductors, to drive decarbonization and digitalization efforts. Infineon's recent advancements include producing GaN chips on 300 mm wafers, a technological breakthrough that significantly reduces production costs and aims to capture a substantial share of the growing GaN chip market.
   
• The China GaN semiconductor device market is expected to grow at a CAGR of 5.7% during the forecast period. China has one of the major automotive manufacturing bases that is supporting the market expansion. China’s lead in power GaN consumer devices drives the future use in telecom/datacom and automotive such as with GaN, smartphone manufacturers can make chargers with smaller case sizes, and with an improved price over power ratio.
   
• Japan is accounted for a share of 16.3% of the GaN semiconductor device market in Asia Pacific in 2024. Japanese companies are moving to mass-produce gallium nitride (GaN) power semiconductor devices for electric vehicles, which stand to gain increased driving range. GaN semiconductor devices are used to control the flow of electricity in EVs and other products. Those that have less power loss and are more efficient than their conventional silicon counterparts are the next generation.
   
• South Korea's GaN semiconductor device market is expected to grow at a CAGR of 9.8% during the forecast period. In South Korea, Gallium Nitride (GaN) semiconductor devices are increasingly utilized across various industries to enhance energy efficiency and performance such as Samsung Electronics is at the forefront of this advancement, planning to commence foundry services for 8-inch GaN power semiconductors by 2025, targeting applications in consumer electronics, data centers, and automotive sectors.
   

GaN Semiconductor Device Market Share

The GaN semiconductor device industry is competitive and highly fragmented with the presence of established global players as well as local players and startups. The top 5 companies in the global ambient light market are Wolfspeed (Cree, Inc.), Infineon Technologies AG, GaN Systems, Broadcom Inc., ON Semiconductor, collectively accounting for a share of 31%. These companies are competing in the market by offering advanced sensors that enhance energy efficiency and seamlessly interact with IoT devices. For example, Toshiba is leading the charge in gaN semiconductor device technology, playing a vital role in the automotive industry’s shift towards electrification. Toshiba is developing next-generation power semiconductors using silicon carbide (SiC) and gallium nitride (GaN) for improved efficiency and performance. These materials enable higher voltage management with lower resistance, contributing to higher output and smaller devices.
 

New product launches are the most significant strategic development that key players in the market are adopting to augment their market share. Key GaN Semiconductor Device manufacturers are increasingly launching new products for proliferation in automotive sectors. For instance, in December 2024, ROHM Co., Ltd. announced that ROHM and TSMC have entered a strategic partnership on the development and volume production of gallium nitride (GaN) power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
 

GaN Semiconductor Device Market Companies

The top 5 companies operating in the GaN semiconductor device industry are:

• Wolfspeed (Cree, Inc.)
• Infineon Technologies AG
• GaN Systems
• Broadcom Inc.
• ON Semiconductor
   

Infineon Technologies AG emerged as a dominant force through their CoolGaN technology, which offers industry-leading efficiency and power density for applications ranging from server power supplies to solar inverters. Their GaN portfolio includes both discrete components and integrated solutions like the CoolGaN IPS family that combines GaN power transistors with gate drivers and protection features. The company's strong position in automotive and industrial markets has accelerated GaN adoption in these sectors, with their devices enabling more compact designs and meeting stringent reliability requirements.
 

The GaN Systems 4th generation GaN power platform sets a new benchmark in power efficiency and compactness, delivering industry-leading performance advancements. For instance, in September 2023, GaN Systems, the global leader in GaN power semiconductors, announced the introduction of its groundbreaking 4th generation GaN power platform. This state-of-the-art technology sets a new power efficiency and compactness standard, delivering an impressive step-function performance boost and industry-leading figures of merit. For example, with GaN Systems Gen4 in an artificial intelligence (AI) server rack, 3.2kW power supplies at 100W/in3 in 2022 are now achieving 120W/in3 with efficiencies above Titanium levels. Gen4 will revolutionize power markets, including consumer electronics, data centers, solar energy, industrial applications, and automotive.
 

GaN Semiconductor Device Industry News

• In April 2024, In April 2024, Transphorm, Inc., a GaN power semiconductor provider, and Weltrend Semiconductor Inc. announced the introduction of two new GaN System-in-Packages (SiPs). These latest additions, namely the WT7162RHUG24C and WT7162RHUG24B, combine Weltrend’s high-frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm’s 480 mΩ and 150 mΩ SuperGaN FETs respectively. This collaboration was built upon Weltrend’s flagship GaN SiP unveiled last year, collectively establishing the first SiP product family based on Transphorm’s SuperGaN platform.
   
• In March 2024, Efficient Power Conversion Corporation launched EPC2361, a groundbreaking gallium nitride (GaN) field-effect transistor (FET) boasting the lowest on-resistance on the market at 100V, 1mΩ. This innovation promises to double the power density when compared to EPC's previous-generation products. The EPC2361 exhibits an impressive typical RDS (on) of only 1mΩ, housed in a thermally enhanced QFN package with an exposed top, occupying a mere footprint of 3mm x 5mm.
   
• In January 2024, Transphorm Inc. launched the two new 650V SuperGaN devices packaged in a 4-lead TO-247 package (TO-247-4L). These new FETs, named TP65H035G4YS and TP65H050G4YS, boast on-resistances of 35mΩ and 50mΩ respectively, featuring a Kelvin-source terminal that enables customers to achieve versatile switching capabilities with reduced energy losses.
   

This GaN semiconductor device market research report includes in-depth coverage of the industry with estimates & forecasts in terms of revenue (USD Billion) from 2021 to 2034, for the following segments:

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Market, By Type

• Opto-semiconductors
• RF semiconductors
• Power semiconductors

Market, By Component

• Transistor
• Diode
• Rectifier
• Power IC
• Others

Market, By Voltage Range

• Less than 100 V
• 100-500 V
• More than 500 V

Market, By End Use Industry

• Aerospace & defense
• Automotive
• Consumer electronics
• Energy & power
• Healthcare
• Industrial
• IT & telecommunications
• Others

The above information is provided for the following regions and countries:

• North America
  • U.S.
  • Canada
• Europe
  • UK
  • Germany
  • France
  • Italy
  • Spain
  • Russia
• Asia Pacific
  • China
  • India
  • Japan
  • South Korea
  • ANZ 
• Latin America
  • Brazil
  • Mexico 
• MEA
  • UAE
  • Saudi Arabia
  • South Africa