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Silicon Carbide MOSFETs Market – By Device Type, By Voltage Range, By Application, By Technology Node, By End-use Industry & Forecast, 2024 – 2032

  • Report ID: GMI12011
  • Published Date: Oct 2024
  • Report Format: PDF

Report Content

Chapter 1   Methodology & Scope

1.1    Market scope & definitions

1.2    Base estimates & calculations

1.3    Forecast calculations

1.4    Data sources

1.4.1    Primary

1.4.2    Secondary

1.4.2.1    Paid sources

1.4.2.2    Public sources

Chapter 2   Executive Summary

2.1    Industry synopsis, 2021-2032

Chapter 3   Industry Insights

3.1    Industry ecosystem analysis

3.1.1    Factor affecting the value chain

3.1.2    Profit margin analysis

3.1.3    Disruptions

3.1.4    Future outlook

3.1.5    Manufacturers

3.1.6    Distributors

3.2    Supplier landscape

3.3    Profit margin analysis

3.4    Key news & initiatives

3.5    Regulatory landscape

3.6    Impact forces

3.6.1    Growth drivers

3.6.1.1    Increasing demand for electric vehicles (EVs)

3.6.1.2    Growth of renewable energy sector

3.6.1.3    Increased adoption in aerospace and defense

3.6.1.4    Government support and investment

3.6.2    Industry pitfalls & challenges

3.6.2.1    High production costs

3.6.2.2    Technical challenges in integration

3.7    Growth potential analysis

3.8    Porter’s analysis

3.9    PESTEL analysis

Chapter 4   Competitive Landscape, 2023

4.1    Introduction

4.2    Company market share analysis

4.3    Competitive positioning matrix

4.4    Strategic outlook matrix

Chapter 5   Market Estimates & Forecast, By Device Type, 2021-2032 (USD Million) (Volume Units)

5.1    Key trends

5.2    Discrete SiC MOSFETs

5.3    Module SiC MOSFETs

Chapter 6   Market Estimates & Forecast, By Voltage Range, 2021-2032 (USD Million) (Volume Units)

6.1    Key trends

6.2    650V

6.3    900V

6.4    1200V

6.5    1700V

6.6    3300V and above

Chapter 7   Market Estimates & Forecast, By Application, 2021-2032 (USD Million) (Volume Units)

7.1    Key trends

7.2    Power supplies

7.3    Inverters

7.4    Electric vehicles (EVs)

7.5    Industrial equipment

7.6    Others

Chapter 8   Market Estimates & Forecast, By Technology, 2021-2032 (USD Million) (Volume Units)

8.1    Key trends

8.2    150mm wafer technology

8.3    200mm wafer technology

Chapter 9   Market Estimates & Forecast, By End-use Industry, 2021-2032 (USD Million) (Volume Units)

9.1    Key trends

9.2    Automotive

9.3    Industrial

9.4    Consumer electronics

9.5    Telecommunications

9.6    Others

Chapter 10   Market Estimates & Forecast, By Region, 2021-2032 (USD Million) (Volume Units)

10.1    Key trends

10.2    North America

10.2.1   U.S.

10.2.2   Canada

10.3    Europe

10.3.1   UK

10.3.2   Germany

10.3.3   France

10.3.4   Italy

10.3.5   Spain

10.3.6   Russia

10.4    Asia Pacific

10.4.1   China

10.4.2   India

10.4.3   Japan

10.4.4   South Korea

10.4.5   Australia

10.5    Latin America

10.5.1   Brazil

10.5.2   Mexico

10.6    MEA

10.6.1   South Africa

10.6.2   Saudi Arabia

10.6.3   UAE

Chapter 11   Company Profiles

11.1    Alpha & Omega Semiconductor

11.2    CISSOID SA

11.3    Danfoss Silicon Power GmbH

11.4    Dynex Semiconductor Ltd.

11.5    Fuji Electric Co., Ltd.

11.6    GeneSiC Semiconductor

11.7    Global Power Technologies Group (GPTG)

11.8    Hitachi Power Semiconductor Device, Ltd.

11.9    II-VI Incorporated (now Coherent Corp.)

11.10    Infineon Technologies AG

11.11    Littelfuse, Inc.

11.12    Microchip Technology Inc.

11.13    Mitsubishi Electric Corporation

11.14    ON Semiconductor

11.15    Renesas Electronics Corporation

11.16    ROHM Semiconductor

11.17    STARCHIP

11.18    STMicroelectronics

11.19    Toshiba Corporation

11.20    TT Electronics

11.21    UnitedSiC (now part of Qorvo)

11.22    Vishay Intertechnology

11.23    Wolfspeed (Cree Inc.)

11.24    X-FAB Silicon Foundries
 

Authors: Suraj Gujar, Rutvij Kshirsagar

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Premium Report Details

  • Base Year: 2023
  • Companies covered: 24
  • Tables & Figures: 410
  • Countries covered: 19
  • Pages: 210
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