High Electron Mobility Transistor Market - By Material Type (Gallium Nitride, Silicon Carbide, Gallium Arsenide), By Industry Vertical (Consumer Electronics, Automotive, Industrial, A&D) & Forecast, 2024 – 2032

High Electron Mobility Transistor Market Size

High Electron Mobility Transistor market was valued at over USD 6.5 Billion in 2023 and is estimated to register a CAGR of over 5% between 2024 and 2032.
 

Wireless technology advances function as a critical factor for the expansion of high electron mobility transistor industry. Among other things, these high-frequency components offer wireless communication systems, low noise levels and large power efficiency. The need for HEMTs is increasing due to continuous upgrading of wireless communication technologies to higher frequencies and bandwidths. The rise of 5G networks, Internet of Things (IoT) devices and next-gen wireless standards has driven the development of HEMTs with better qualities like greater cutoff frequency, lower P.C. Also, there is a forecast that integrating HEMTs in newly developed automotive radar systems, satellite communications and millimeter-wave imaging will further stimulate market growth.
 

The high electron mobility transistor industry has been significantly boosted by the growth of IoT. In these applications, HEMTs are necessary components for wireless communication systems, which need fast and low noise amplifiers that meet a range of IoT requirements for smart homes, wearable devices, industrial sensors, connected vehicles etc. This has also increased the demand for HEMT’s since IoT connects more devices over networks hence requiring higher data transmission rates in order to accommodate them all. It is also worth noting that there are several industries like e-healthcare and smart manufacturing which greatly depend on HEMT as their key components towards fast data processing and reliable communication among interconnected device networks in such cities.
 

A significant challenge in the HEMT market is posed by complicated and costly manufacturing. The fabrication techniques for HEMTs – such as gallium nitride (GaN) or indium phosphide (InP) compound semiconductor materials – are intricate and use processing tools which are not only expensive but also difficult to process. Moreover, the manufacturing of these materials is difficult and expertise with expensive equipment is required. Also, manufacturers will have to part with some money since there are strict quality control measures put in place to ensure optimum performance.
 

High Electron Mobility Transistor Market Trends

Aerospace and defense applications are continually a major feature of the High Electron Mobility Transistor (HEMT) market. HEMTs have excellent performance features such as high frequency, low noise figure, and high-power efficiency, making them ideal for different radar, communication and electronic warfare systems used in aerospace and defense industries. Evolving geopolitical tensions, modernization attempts, improved situational awareness/communication needs will continue to drive demand for new types of sophisticated radar systems, electronic warfare equipment and satellite communications systems.
 

The market is witnessing a rise of new applications in automotive electronics as a continuing trend. There is increasing demand for high-performance semiconductors that can handle harsh automobile environments, as vehicle electrification and autonomous driving technologies continue to advance. The ability to manipulate high-frequency signals and high-power densities, HEMTs are appropriate for multiple automotive systems including radar systems, LiDAR sensors, and wireless communication modules. Moreover, efficient power conversion and thermal management are critical aspects of HEMTs in power management systems of electric vehicles.
 

High Electron Mobility Transistor Market Analysis

Based on material type, the market is segmented into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), and others. Gallium nitride (GaN) segment held the largest market share of over 48% in 2023, primarily due to its performance and versatility characteristics. GaN-based HEMTs are better than silicon-based transistors in terms of high electron mobility, low resistance, and improved power handling capabilities, therefore making them ideal for high frequency and high-power applications. In applications such as telecommunications, aerospace, and automotive industries where efficient power conversion and high-speed data transmission are crucial, GaN HEMTs are extensively used. The growing acceptance of GaN technology in emerging areas like 5G wireless communication, electric vehicles and renewable energy is also expected to propel market expansion.
 

Based on industry vertical, the market is segmented into consumer electronics, automotive, industrial, aerospace and defence, and others. The consumer electronics segment is anticipated to register a CAGR of over 5% from 2024 to 2032. HEMTs offer remarkable performance characteristics, including high speed, low noise levels, and low power consumption, making them well-suited for various applications in headphone electronics. In smartphones, tablets, and wearable gadgets, HEMTs facilitate faster data processing, extended battery life, and improved signal reception, thereby enhancing the overall user experience.? The ability to handle high frequencies and power levels makes them ideal for applications such as wireless communication, signal amplification, and power management. 
 

Asia Pacific accounts for a significant share in the global high electron mobility transistor market, with a market share of about 37% in 2023. Asia Pacific countries like China, Japan, South Korea and Taiwan are main manufacturers of semiconductors and technological development. Accelerated HEMTs production and uptake are facilitated by this area’s strong infrastructure and competent workforce. The rising appetite for high-performance semiconductors like HEMTs is due to increasing demand for consumer electronics, telecommunications equipment, and automotive electronics in Asian-Pacific countries.
 

The rise of Smartphones, tablets, IoT technologies and 5G infrastructure further amplifies the need. The government initiatives which promote growth of semiconductor industry as well as increased research and development investments that lead to innovation in HEMTs because governments support the industry as it grows. Furthermore, market expansion receives contributions from alliances between local companies with international semiconductor manufacturers.
 

High Electron Mobility Transistor Market Share

NXP Semiconductors and ST Microelectronics held a significant share of the High Electron Mobility Transistor industry in 2023. NXP Semiconductors is a leading global provider of high-performance mixed-signal semiconductor solutions. In the High Electron Mobility Transistor (HEMT) Market, NXP offers a range of innovative HEMT products tailored for various applications, including wireless communication, automotive radar systems, and industrial automation.
 

ST Microelectronics is a leading semiconductor manufacturer renowned for its contributions to the High Electron Mobility Transistor (HEMT) Market. The company designs and produces HEMTs, leveraging advanced semiconductor fabrication techniques and innovative designs to create high-performance transistors. ST Microelectronics' HEMT offerings cater to a wide range of applications, including telecommunications, aerospace, defense, and consumer electronics.
 

High Electron Mobility Transistor Market Companies

Major players operating in the high electron mobility transistor industry are:

• NXP Semiconductors
• ST Microelectronics
• Texas Instruments
• Infineon Technologies
• Renesas Electronics
• Intel Corporation
• Sumitomo Electric Device Innovations, Inc.
   

High Electron Mobility Transistor Industry News

• In October 2022, Sumitomo Electric launched the world's first post-5g gallium nitride transistor (GaN-HEMT) that uses N-polar GaN advancing the next-generation telecommunication systems to meet high-power, high-frequency needs.
   
• In December 2023, Teledyne e2v HiRel Electronics expanded the portfolio of space screened GaN HEMTs. Teledyne e2v HiRel has expanded its portfolio by introducing new space screened versions of its gallium nitride high electron mobility transistors (GaN HEMTs). The additions include 100 V, 90 A, and 650 V, 30 A GaN HEMTs suitable for applications like battery management, dc-dc converters, and space motor drives. These devices offer extended temperature performance, low inductance, and low thermal resistance packaging, catering to critical aerospace and defense power applications.
   

The high electron mobility transistor market research report includes in-depth coverage of the industry with estimates & forecast in terms of revenue (USD Billion) from 2018 to 2032, for the following segments:

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Market, By Material Type

• Gallium Nitride (GaN)
• Silicon Carbide (SiC)
• Gallium Arsenide (GaAs)
• Others

Market, By Industry Vertical

• Consumer Electronics
• Automotive
• Industrial
• Aerospace and Defense
• Others

The above information is provided for the following regions and countries:

• North America
  • U.S.
  • Canada
• Europe
  • UK
  • Germany
  • France
  • Italy
  • Spain
  • Russia
  • Rest of Europe
• Asia Pacific
  • China
  • India
  • Japan
  • South Korea
  • ANZ
  • Rest of Asia Pacific 
• Latin America
  • Brazil
  • Mexico
  • Rest of Latin America 
• MEA
  • UAE
  • Saudi Arabia
  • South Africa
  • Rest of MEA