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Silicon Carbide MOSFETs Market Share

Report ID: GMI12011
Published Date: Oct 2024
Report Format: PDF

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Silicon Carbide MOSFETs Market Share

In the silicon carbide (SiC) MOSFETs market, competition among key players like Hitachi Power Semiconductor Device, II-VI (Coherent Corp.), Infineon, Littelfuse, Microchip, Mitsubishi Electric, ON Semiconductor, Renesas, ROHM, STARCHIP, STMicroelectronics, Toshiba, and TT Electronics is driven by several critical factors. Product performance and reliability are primary competitive differentiators, as SiC MOSFETs are valued for their high efficiency, heat resistance, and suitability for high-voltage applications in industries like automotive, renewable energy, and industrial equipment.

Companies focus heavily on innovation in design and engineering, working to deliver SiC MOSFETs with superior switching speed, thermal performance, and power density. Price competitiveness is also essential, as the higher production cost of SiC compared to silicon remains a challenge. Effective distribution networks, strong customer relationships, and partnerships with OEMs and system integrators are crucial for expanding market reach. Additionally, quality control, compliance with global standards, and continuous R&D investment are important for maintaining a competitive edge in this rapidly growing and technically demanding market.

Silicon Carbide MOSFETs Market Companies

Major players operating in the silicon carbide MOSFETs industry are:

Hitachi Power Semiconductor Device, Ltd.
II-VI Incorporated (now Coherent Corp.)
Infineon Technologies AG
Littelfuse, Inc.
Microchip Technology Inc.
Mitsubishi Electric Corporation
ON Semiconductor
Renesas Electronics Corporation
ROHM Semiconductor
STARCHIP
STMicroelectronics
Toshiba Corporation

Authors: Suraj Gujar, Rutvij Kshirsagar

Frequently Asked Questions (FAQ) :

The global market size for silicon carbide MOSFETs was valued at approximately USD 2 billion in 2023 and is expected to reach around USD 21.5 billion by 2032, driven by a CAGR of 30.1% from 2024 to 2032 due to the rising adoption of electric vehicles (EVs).

The silicon carbide MOSFETs industry from module SiC MOSFETs segment is expected to register a CAGR of 31% during the forecast period from 2024 to 2032, due to its superior performance in high-power applications.

The U.S. accounted for a 67.8% share of the North America market in 2023, driven by strong demand from the EV industry, renewable energy sector, and advanced power electronics applications.

Major players in the industry include Hitachi Power Semiconductor Device, Ltd., Littelfuse, Inc., Microchip Technology Inc., Mitsubishi Electric Corporation, ON Semiconductor, Renesas Electronics Corporation, ROHM Semiconductor, and STARCHIP.