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The expansion of telecommunication infrastructure is driving several key trends in the Silicon Carbide (SiC) market, particularly as the industry moves towards more advanced and efficient technologies to support the growing demand for high-speed connectivity, 5G networks, and beyond. As 5G networks continue to be deployed globally, there is a rising need for high-performance, energy-efficient power electronics in base stations. SiC technology is increasingly being adopted in these applications due to its superior efficiency, higher voltage operation, and reduced heat generation compared to traditional silicon-based components. This allows for more compact and reliable power systems that can handle the higher power demands of 5G infrastructure. The growing demand for high-power telecommunications equipment, such as data centers and network infrastructure, is another trend fueling the adoption of SiC technology. SiC power semiconductors enable the development of high-power converters and inverters that are more efficient and compact, which is essential for supporting the large-scale power requirements of modern telecom networks
The increased adoption of SiC in power electronics is a notable trend driven by the need for higher efficiency and performance in various applications. SiC devices, such as MOSFETs and diodes, are increasingly used in power converters, inverters, and other high-power applications due to their ability to operate at higher temperatures and voltages compared to traditional silicon devices. For instance, in November 2023, Mitsubishi Electric Corporation announced a strategic partnership with Nexperia B.V. to collaboratively develop Silicon Carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will harness its wide-bandgap semiconductor technologies to develop and supply SiC MOSFET chips, which Nexperia will then use to create SiC discrete devices.