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Next-Generation Memory Market size was valued at over USD 6.7 billion in 2023 and is estimated to register a CAGR of over 24.8% between 2024 & 2032. Increasing interest in IoT devices is propelling the market expansion.
IoT devices produce big data that need to be stored and analyzed effectively, owing to which there is an increasing requirement for advanced memory technologies. Next-gen memory solutions provide many benefits, such as their compact size & large data storing capacity and low power consumption, which are tailor-made to suit IoT-related needs & applications such as smart meters and connected cars, among others.
This next-generation memory market has witnessed significant growth in response to the increasing demand for non-volatile memory products. Critical applications that require constant storage such as enterprise storage, data centers, automotive electronics & IoT devices do not prefer volatile memory as it does not retain data when power is switched off. Against traditional non-volatile memories such as NAND flash & Hard Disk Drives (HDDs), next-generation memory technologies including Resistive RAM (ReRAM), Phase-Change Memory (PCM), and Magnetic RAM (MRAM) are significantly advantageous due to their faster access times, decreased power consumption & higher density.
Report Attribute | Details |
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Base Year: | 2023 |
Next-Generation Memory Market Size in 2023: | USD 6.7 Billion |
Forecast Period: | 2024 to 2032 |
Forecast Period 2024 to 2032 CAGR: | 24.8% |
2032 Value Projection: | USD 47 Billion |
Historical Data for: | 2018 to 2023 |
No. of Pages: | 230 |
Tables, Charts & Figures: | 362 |
Segments covered: | Technology, memory wafer size, application, and region |
Growth Drivers: |
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Pitfalls & Challenges: |
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In the effort to come up with next generation memory, there are a lot of issues. The desire for faster speeds, more capacities and lower power consumption in memory technology is also costly. This is compounded by the reality that introducing new technology into current systems and norms presents its own set of problems. For instance, overcoming physical limitations that are inherent in emerging memory technologies such as phase change or resistive random-access memories requires extensive research and development.