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High Electron Mobility Transistor market was valued at over USD 6.5 Billion in 2023 and is estimated to register a CAGR of over 5% between 2024 and 2032.
Wireless technology advances function as a critical factor for the expansion of high electron mobility transistor industry. Among other things, these high-frequency components offer wireless communication systems, low noise levels and large power efficiency. The need for HEMTs is increasing due to continuous upgrading of wireless communication technologies to higher frequencies and bandwidths. The rise of 5G networks, Internet of Things (IoT) devices and next-gen wireless standards has driven the development of HEMTs with better qualities like greater cutoff frequency, lower P.C. Also, there is a forecast that integrating HEMTs in newly developed automotive radar systems, satellite communications and millimeter-wave imaging will further stimulate market growth.
Report Attribute | Details |
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Base Year: | 2023 |
High Electron Mobility Transistor Market Size in 2023: | USD 6.5 Billion |
Forecast Period: | 2024 - 2032 |
Forecast Period 2024 - 2032 CAGR: | 5% |
2032 Value Projection: | USD 10 Billion |
Historical Data for: | 2018 - 2023 |
No. of Pages: | 230 |
Tables, Charts & Figures: | 362 |
Segments covered: | Material type, industry vertical, and region |
Growth Drivers: |
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Pitfalls & Challenges: |
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The high electron mobility transistor industry has been significantly boosted by the growth of IoT. In these applications, HEMTs are necessary components for wireless communication systems, which need fast and low noise amplifiers that meet a range of IoT requirements for smart homes, wearable devices, industrial sensors, connected vehicles etc. This has also increased the demand for HEMT’s since IoT connects more devices over networks hence requiring higher data transmission rates in order to accommodate them all. It is also worth noting that there are several industries like e-healthcare and smart manufacturing which greatly depend on HEMT as their key components towards fast data processing and reliable communication among interconnected device networks in such cities.
A significant challenge in the HEMT market is posed by complicated and costly manufacturing. The fabrication techniques for HEMTs – such as gallium nitride (GaN) or indium phosphide (InP) compound semiconductor materials – are intricate and use processing tools which are not only expensive but also difficult to process. Moreover, the manufacturing of these materials is difficult and expertise with expensive equipment is required. Also, manufacturers will have to part with some money since there are strict quality control measures put in place to ensure optimum performance.