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High Electron Mobility Transistor Market Analysis

  • Report ID: GMI8800
  • Published Date: Apr 2024
  • Report Format: PDF

High Electron Mobility Transistor Market Analysis

Based on material type, the market is segmented into gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), and others. Gallium nitride (GaN) segment held the largest market share of over 48% in 2023, primarily due to its performance and versatility characteristics. GaN-based HEMTs are better than silicon-based transistors in terms of high electron mobility, low resistance, and improved power handling capabilities, therefore making them ideal for high frequency and high-power applications. In applications such as telecommunications, aerospace, and automotive industries where efficient power conversion and high-speed data transmission are crucial, GaN HEMTs are extensively used. The growing acceptance of GaN technology in emerging areas like 5G wireless communication, electric vehicles and renewable energy is also expected to propel market expansion.

 

High Electron Mobility Transistor Market Share, By Industry Vertical, 2023

Based on industry vertical, the market is segmented into consumer electronics, automotive, industrial, aerospace and defence, and others. The consumer electronics segment is anticipated to register a CAGR of over 5% from 2024 to 2032. HEMTs offer remarkable performance characteristics, including high speed, low noise levels, and low power consumption, making them well-suited for various applications in headphone electronics. In smartphones, tablets, and wearable gadgets, HEMTs facilitate faster data processing, extended battery life, and improved signal reception, thereby enhancing the overall user experience.? The ability to handle high frequencies and power levels makes them ideal for applications such as wireless communication, signal amplification, and power management. 
 

China High Electron Mobility Transistor Market, By Region, 2022 - 2032, (USD Million)

Asia Pacific accounts for a significant share in the global high electron mobility transistor market, with a market share of about 37% in 2023. Asia Pacific countries like China, Japan, South Korea and Taiwan are main manufacturers of semiconductors and technological development. Accelerated HEMTs production and uptake are facilitated by this area’s strong infrastructure and competent workforce. The rising appetite for high-performance semiconductors like HEMTs is due to increasing demand for consumer electronics, telecommunications equipment, and automotive electronics in Asian-Pacific countries.
 

The rise of Smartphones, tablets, IoT technologies and 5G infrastructure further amplifies the need. The government initiatives which promote growth of semiconductor industry as well as increased research and development investments that lead to innovation in HEMTs because governments support the industry as it grows. Furthermore, market expansion receives contributions from alliances between local companies with international semiconductor manufacturers.
 

Authors: Suraj Gujar, Sandeep Ugale

Frequently Asked Questions (FAQ) :

Industry size for high electron mobility transistor exceeded USD 6.5 billion in 2023 and is estimated to register over 5% CAGR between 2024 and 2032, due to rising advances in wireless technology.

The gallium nitride (GaN) material type segment held over 48% of the high electron mobility transistor industry in 2023, primarily due to its performance and versatility characteristics.

Asia Pacific accounted for 37% high electron mobility transistor market share in 2023, due to rising semiconductor production in China, Japan, South Korea and Taiwan.

Some of the prominent high electron mobility transistor firms worldwide are NXP Semiconductors, ST Microelectronics, Texas Instruments, Infineon Technologies, Renesas Electronics, Intel Corporation, and Sumitomo Electric Device Innovations, Inc.

High Electron Mobility Transistor Market Scope

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Premium Report Details

  • Base Year: 2023
  • Companies covered: 10
  • Tables & Figures: 362
  • Countries covered: 22
  • Pages: 230
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